Dr. A. Victor Adedeji is an associate professor of physics in the department of Natural Sciences. His research interest includes: development of contact metallization scheme for Wide Band Gap (WBG) semiconductor microelectronics useful for special applications in harsh environment; and the deposition and characterization of thin films for "smart window" applications.
Include fabrication and characterization of micro- and nano-electronic contacts (both Ohmic & Schottky) on Wide Band Gap (WBG) semiconductor (SiC, GaN, diamond etc.) for applications in extreme harsh environment. WBG semiconductors are advanced materials with intrinsic properties that make them suitable for high power and high frequency device fabrication and for devices that are able to survive in high temperature and high radiation environment. It is important to develop contacts that can survive in these extreme conditions as well. Otherwise, the rapid failure of contact metallization can cause devices to fail quickly.
We are also interested in developing and characterizing multilayer thin films for “smart window” application. These films are chromogenic, the transmitted radiation through them depend on ambient temperature (thermochromic) and applied voltage (electrochromic). They are important for efficient energy consumption.
1. Chenxi Zhang, Wei Cao, Adetayo V. Adedeji and Hani E. Elsayed-Ali, Preparation and properties of VO2 thin films by a novel sol-gel process, J. Sol-Gel Sci. Technol. 69 (2014) 320-324.
2. A.V. Adedeji, M.R. Ross, N. Hamden, A.K. Pradhan, T. Isaacs-smith and A.C. Ahyi, Effective refractory metal alloy barrier layer for high temperature microelectronic device applications, MRS Online Proceedings Library, 1519 2013.
3. A.V. Adedeji, S.D. Worsley, T.L. Baker, R. Mundle, A.K. Pradhan, A.C. Ahyi and T. Isaacs-Smith, Dynamic properties of spectrally selective reactively sputtered transition metal oxides, MRS Online Proceedings Library, 1494 2013.
4. A.V. Adedeji, A.C. Ahyi, J.R. Williams, S.E. Mohney and J. Schofield, Ambient temperature characteristics of schottky contacts on 4H-SiC aged in air at 350ºC, Solid State Electronic 54 (2010) 736-740.
Funded Research Projects:
NSF grant: MRI: Acquisition of a portable SEM with EDS to investigate damages to metallization structure and its interface with WBG semiconductor in harsh environments, (2013 - 2015) (PI): $ 237,423.00
NSF grant: HBCU-UP Research Initiation Award (RIA): Fabrication and Characterization of Composite Contacts on Wide Band Gap Semiconductor for High temperature Application in Air,(2011 – 2013) (PI): $ 200,000.00
NSF grant: MRI: Acquisition of a sputtering system for contact metallization of WBG semiconductor for high temperature application in air ambient, (2010 – 2013) (PI): $ 204,743.00
NSF grant: ECSU Noyce Scholarship Program, (2010 – 2015) (Co-PI): $ 667,384.00